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RF101L2S
Diodes
Fast recovery Diode
RF101L2S
Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
Features 1) Small power mold type. (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss
2.0
0.10.02 0.1
5.00.3
6
6
4.50.2
1.20.3
1.50.2
2.00.2
Structure
Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacture date
Taping specifications (Unit : mm)
2.00.05 4.00.1 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Limits Symbol VRM 200 Rverse voltage (repetitive peak) VR Reverse voltage (DC) 200 1 Average rectified forward current (*1) Io IFSM 20 Forward peak surge current (60Hz1cyc.) 150 Junction temperature Tj -55 to +150 Storage temperature Tstg (*1)Tc=90max Mounted on epoxy board. 180Half sine wave
Absolute maximum ratings (Ta=25C) Parameter
5.30.1 0.05 9.50.1
Unit V V A A
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V A ns Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
trr
120.2
Rev.A
4.2
1/3
RF101L2S
Diodes
Electrical characteristic curves (Ta=25C)
1 Ta=150 0.1 Ta=125 10000 1000 100 Ta=25 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200 Ta=-25 Ta=150 Ta=125
100
f=1MHz f=1MHz
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75
10
Ta=75 0.01 Ta=25 Ta=-25
0.001
1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30
850
100
100
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
840
Ta=25 IF=1A n=30pcs
90 80 70 60 50 40 30 20 10 AVE:11.1nA
Ta=25 VR=200V n=30pcs
90 80 70 60 50 40 30 20 10 0 AVE:37.0pF
Ta=25 f=1MHz VR=0V n=10pcs
830
820
810
AVE:818.6mV
800
0 VF DISPERSION MAP IR DISPERSION MAP
Ct DISPERSION MAP
200
30
1000
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
Ifsm
1cyc 8.3ms
25 20 15 10 5 0 AVE:12.2ns
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 100 8.3ms 8.3ms 1cyc
100
10
50 AVE:63.0A 0 IFSM DISRESION MAP
1 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
1000
2
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a)
1.5
DC D=1/2
FORWARD POWER DISSIPATION:Pf(W)
100
100
Rth(j-c) 10
IM=10mA IF=100mA
1
Sin(180)
0.5
1ms time
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
300us
0 1000 0 0.5 1 1.5 2
0.01
1 10 100 TIME:t(s) Rth-t CHARACTERISTICS
0.1
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
Rev.A
2/3
RF101L2S
Diodes
3 0A 0V 2 DC D=1/2 1 Sin(180) Io V VR t t D=t/ D=t/T VR=100V T T Tj=150
3
t VR D=t/T T VR=100V T Tj=150
ELECTROSTATIC DISCHARGE TEST ESD(KV)
0A0 0V 0
Io t
30 No break at 30kV 25 20 15 10 5
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2
DC D=1/2
1
Sin(180)
AVE:13.6kV
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
0 C=200pF R=0 C=100pF R=1.5k
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
ESD DISPERSION MAP
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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